Home			View Cart ()   Checkout   MySI Account   What's New New Devices Find Reports        More New Devices Analog / Mixed Signal Image Sensor Logic Memory Process Wireless Careers at SI Find out about exciting opportunities at Semiconductor Insights… RSS Feeds  New Devices  Articles  Events  Press Releases Samsung 56nm 1Gbit DDR2 SDRAM The 56nm process node device has 1Gbit of memory and achieved an impressive die area efficiency with 23.3Mbits per mm2.This is 3% more efficient than that of the Hynix 54nm 1Gbit DDR2 SDRAM. With only 3 layers of metal interconnect and the smallest 1Gbit DDR2 die size, this 1Gbit DDR2 SDRAM helps the manufacturer remain very competitive. Hynix 54nm 1Gbit DDR2 SDRAM This is the latest 1Gbit DDR2 SDRAM from the manufacturer using the 54nm DRAM process technology. Despite lack of 6F2 cell technology, the manufacturer has achieved an impressive die area efficiency of 22.7Mbits per mm2, which is very close to its archrival Samsung’s 23.3Mbies per mm2. Toshiba 16G 43nm MLC NAND Flash This latest 43nm process node product features 16Gbit of non-volatile memory storage with 120mm2 of chip size. Compared to the Toshiba’s previous generation 56nm 16Gbit MLC NAND Flash product (TC58NVG4D1DTG00), this new device is 30% smaller in chip size. Qualcomm Snapdragon Mobile Processor The Qualcomm Snapdragon allows the mobile device vendors to escalate the latest handset market trend to enable laptop experience on handsets. It leads the industry in functionality, performance, power efficiency and footprint.